[G-8-4] GaN-Based Light-Emitting Diodes With Si-doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer

C. H. Kuo、S. J. Chang、Y. K. Su、L. W. Wu、J. K. Sheu、J. M. Tsai (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University、2.Optical Science Center, National Central University、3.South Epitaxy Corporation)

https://doi.org/10.7567/SSDM.2002.G-8-4