[LB-1-2] Plasma Nitridation Technique for the Formation of Thermally Stable Hf-silicate Gate Dielectric with Controlled Nitrogen Profile

Akio Kaneko、Yoshiki Kamata、Mizuki Ono、Masato Koyama、Akira Nishiyama、Yuichi Kamimuta、Chie Hongo、Akira Takashima、Dawei Gao、Seiji Inumiya、Kazuhiro Eguchi、Mariko Takayanagi (1.Advanced LSI Technology Laboratory, Environmental Engineering and Analysis Center, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、3.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2002.LB-1-2