A behavior of Xenon difluoride etching on poly-Silicon sacrificial layer for fabrication of MEMS device

Takeshi Taniguchi; Takashi Kinoshita; Koichi Ikeda

doi:https://doi.org/10.7567/SSDM.2002.LP14-1

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[LP14-1] A behavior of Xenon difluoride etching on poly-Silicon sacrificial layer for fabrication of MEMS device

Takeshi Taniguchi、Takashi Kinoshita、Koichi Ikeda (1.Sony Corporation, Semiconductor Network Company, Technology Development Group、2.Emerging Devices Division, MEMS Department)

https://doi.org/10.7567/SSDM.2002.LP14-1

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