[LP5-1] Optical properties of isoelectronically P-doped GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

F. S. Juang、Y. G. Hong、M. H. Kim、C. W. Tu、W. C. Lai、J. Tsai (1.Department of Electro-optics Engineering, National Huwei Institute of Technology、2.Department of Electrical and Computer Engineering, University of California at San Diego、3.South Epitaxy Corporation, Tainan Science-based industry Park)

https://doi.org/10.7567/SSDM.2002.LP5-1