The Japan Society of Applied Physics

[P2-2] Analysis of the Leakage Mechanism of Sub-110nm DRAM Shallow Junctions with Titanium and Cobalt Silicided Contacts after Heat Budget

S. B. Kang, H. S. Park, K. J. Moon, S. G. Yang, G. H. Choi, U. I. Chung, J. T. Moon (1.Process and Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.)