Analysis of the Leakage Mechanism of Sub-110nm DRAM Shallow Junctions with Titanium and Cobalt Silicided Contacts after Heat Budget

S. B. Kang; H. S. Park; K. J. Moon; S. G. Yang; G. H. Choi; U. I. Chung; J. T. Moon

doi:https://doi.org/10.7567/SSDM.2002.P2-2

[P2-2] Analysis of the Leakage Mechanism of Sub-110nm DRAM Shallow Junctions with Titanium and Cobalt Silicided Contacts after Heat Budget

S. B. Kang, H. S. Park, K. J. Moon, S. G. Yang, G. H. Choi, U. I. Chung, J. T. Moon (1.Process and Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2002.P2-2

2002 International Conference on Solid State Devices and Materials

[P2-2] Analysis of the Leakage Mechanism of Sub-110nm DRAM Shallow Junctions with Titanium and Cobalt Silicided Contacts after Heat Budget