Nano-Roughness Enhanced Reliability of MOS Tunneling Diodes

F. Yuan; C.-H. Lin; C.-R. Shie; K.-F. Chen; M. H. Lee; C. W. Liu

doi:https://doi.org/10.7567/SSDM.2002.P2-5

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[P2-5] Nano-Roughness Enhanced Reliability of MOS Tunneling Diodes

F. Yuan, C.-H. Lin, C.-R. Shie, K.-F. Chen, M. H. Lee, C. W. Liu (1.Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2002.P2-5

▲