[P3-18] Effects of Oxidizer Dose and Temperature on Interfacial Silicate Formation and Flatband Voltage in Atomic Layer Deposition of Al2O3

R. Kuse, N. Miyata, M. Kundu, T. Yasuda, K. Iwamoto, K. Kimoto, T. Nabatame, A. Toriumi (1.MIRAI Project, Association of Super-Advanced Electronic Technologies (ASET), 2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Advanced Materials Laboratory, National Institute for Materials Science, 4.Department of Materials Science, School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.2002.P3-18