Topography change with Multilayer Oxidation at SiO2/Si(111) interfaces

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

D. Hojo, N. Tokuda, K. Yamabe (1.Institute of Applied physics, Yamabe laboratory University of Tsukuba)