Formation of Ni Silicide Using Flash Lamp Technology

I. Nishimura; T. Karasawa; T. Owada; M. Yasuhira; T. Arikado

doi:https://doi.org/10.7567/SSDM.2002.P3-9

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[P3-9] Formation of Ni Silicide Using Flash Lamp Technology

I. Nishimura、T. Karasawa、T. Owada、M. Yasuhira、T. Arikado (1.Research Dept1, Semiconductor Leading Edge Technologies Inc.、2.Lamp Technology and Engineering Division, Ushio Inc.)

https://doi.org/10.7567/SSDM.2002.P3-9

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