Formation of Ni Silicide Using Flash Lamp Technology

I. Nishimura; T. Karasawa; T. Owada; M. Yasuhira; T. Arikado

doi:https://doi.org/10.7567/SSDM.2002.P3-9

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[P3-9] Formation of Ni Silicide Using Flash Lamp Technology

I. Nishimura, T. Karasawa, T. Owada, M. Yasuhira, T. Arikado (1.Research Dept1, Semiconductor Leading Edge Technologies Inc., 2.Lamp Technology and Engineering Division, Ushio Inc.)

https://doi.org/10.7567/SSDM.2002.P3-9

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