[P5-4] RIE Gate-recessed InGaP/InGaAs Doped-channel FETs with Various Gate-lengths (0.2 μm～1.0 μm)

Shih-Cheng Yang、Wen-Kai Wang、Cheng-Kuo Lin、Hsien-Chin Chiu、Ming-Jyh Hwu、Yi-Jen Chan (1.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2002.P5-4