Improvement of crystal quality of GaN by modulated molecular beam epitaxy

K-T. Liu; T. Tezuka; S. Sugita; Y. Watari; Y. Horikoshi; Y-K. Su

doi:https://doi.org/10.7567/SSDM.2002.P5-6

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[P5-6] Improvement of crystal quality of GaN by modulated molecular beam epitaxy

K-T. Liu、T. Tezuka、S. Sugita、Y. Watari、Y. Horikoshi、Y-K. Su (1.School of Science and Engineering, Waseda University、2.Department of Electrical Engineering, National Chen Kung University)

https://doi.org/10.7567/SSDM.2002.P5-6

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