Improvement of crystal quality of GaN by modulated molecular beam epitaxy

K-T. Liu; T. Tezuka; S. Sugita; Y. Watari; Y. Horikoshi; Y-K. Su

doi:https://doi.org/10.7567/SSDM.2002.P5-6

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[P5-6] Improvement of crystal quality of GaN by modulated molecular beam epitaxy

K-T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y-K. Su (1.School of Science and Engineering, Waseda University, 2.Department of Electrical Engineering, National Chen Kung University)

https://doi.org/10.7567/SSDM.2002.P5-6

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