[P5-8] Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-step Ohmic Contact Process

Dong-Hyun Cho、Mitsuaki Shimizu、Toshihide Ide、Byoungrho Shim、Hajime Okumura (1.National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC)、2.R&D Association for Future Electron Devices (FED), Advanced Power Device Laboratory、3.Ultra-Low-Loss Power Device Technology Research Body (UPR))

https://doi.org/10.7567/SSDM.2002.P5-8