Multiplication characteristics of a-Si:H p-i-n photodiode film in high electric field

Masahiro Akiyama; Masaki Hanada; Kazuaki Sawada; Makoto Ishida

doi:https://doi.org/10.7567/SSDM.2002.P6-3

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[P6-3] Multiplication characteristics of a-Si:H p-i-n photodiode film in high electric field

Masahiro Akiyama、Masaki Hanada、Kazuaki Sawada、Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.2002.P6-3

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