Dual workfunction metal-gate FinFET devices fabricated using total gate silicidation

Jakub Kedzierski; Edward Nowak; Meikei Ieong; Thomas Kanarsky; Diane Boyd

doi:https://doi.org/10.7567/SSDM.2003.A-1-1

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-1-1] Dual workfunction metal-gate FinFET devices fabricated using total gate silicidation

Jakub Kedzierski, Edward Nowak, Meikei Ieong, Thomas Kanarsky, Diane Boyd (1.IBM Semiconductor Research and Development Center (SRDC) Research Division, 2.Microelectronics Division)

https://doi.org/10.7567/SSDM.2003.A-1-1

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