Screening Effect on Remote Coulomb Scattering due to impurities in Polysilicon Gate of MOSFET

Takamitsu Ishihara; Junji Koga; Shinichi Takagi; Kazuya Matsuzawa

doi:https://doi.org/10.7567/SSDM.2003.A-1-4

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-1-4] Screening Effect on Remote Coulomb Scattering due to impurities in Polysilicon Gate of MOSFET

Takamitsu Ishihara、Junji Koga、Shinichi Takagi、Kazuya Matsuzawa (1.Advanced LSI Thechnology Laboratory, Research and Development Center,Toshiba corporation)

https://doi.org/10.7567/SSDM.2003.A-1-4

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