A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process

H. Ohji; A. Mutoh; K. Torii; R. Mitsuhashi; A. Horiuchi; T. Maeda; H. Itoh; T. Kawahara; K. Hayashi; T. Sasaki; N. Kasai; H. Kitajima; M. Yasuhira; T. Arikado

doi:https://doi.org/10.7567/SSDM.2003.A-3-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-3-3] A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process

H. Ohji、A. Mutoh、K. Torii、R. Mitsuhashi、A. Horiuchi、T. Maeda、H. Itoh、T. Kawahara、K. Hayashi、T. Sasaki、N. Kasai、H. Kitajima、M. Yasuhira、T. Arikado (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2003.A-3-3

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