A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process

H. Ohji; A. Mutoh; K. Torii; R. Mitsuhashi; A. Horiuchi; T. Maeda; H. Itoh; T. Kawahara; K. Hayashi; T. Sasaki; N. Kasai; H. Kitajima; M. Yasuhira; T. Arikado

doi:https://doi.org/10.7567/SSDM.2003.A-3-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-3-3] A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process

H. Ohji, A. Mutoh, K. Torii, R. Mitsuhashi, A. Horiuchi, T. Maeda, H. Itoh, T. Kawahara, K. Hayashi, T. Sasaki, N. Kasai, H. Kitajima, M. Yasuhira, T. Arikado (1.Semiconductor Leading Edge Technologies, Inc.)

https://doi.org/10.7567/SSDM.2003.A-3-3

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