The Japan Society of Applied Physics

[A-4-3] High-power 200-mW 660-nm AlGaInP laser diodes with a low operating current

Ryoji Hiroyama, Daijiro Inoue, Shingo Kameyama, Atsushi Tajiri, Masayuki Shono, Minoru Sawada, Akira Ibaraki (1.Materials and Devices Development Center, Sanyo Electric Co., Ltd., 2.LED Division, Tottori Sanyo Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.A-4-3