High-power 200-mW 660-nm AlGaInP laser diodes with a low operating current

Ryoji Hiroyama; Daijiro Inoue; Shingo Kameyama; Atsushi Tajiri; Masayuki Shono; Minoru Sawada; Akira Ibaraki

doi:https://doi.org/10.7567/SSDM.2003.A-4-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-4-3] High-power 200-mW 660-nm AlGaInP laser diodes with a low operating current

Ryoji Hiroyama, Daijiro Inoue, Shingo Kameyama, Atsushi Tajiri, Masayuki Shono, Minoru Sawada, Akira Ibaraki (1.Materials and Devices Development Center, Sanyo Electric Co., Ltd., 2.LED Division, Tottori Sanyo Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.A-4-3

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