High-power 200-mW 660-nm AlGaInP laser diodes with a low operating current

Ryoji Hiroyama; Daijiro Inoue; Shingo Kameyama; Atsushi Tajiri; Masayuki Shono; Minoru Sawada; Akira Ibaraki

doi:https://doi.org/10.7567/SSDM.2003.A-4-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-4-3] High-power 200-mW 660-nm AlGaInP laser diodes with a low operating current

Ryoji Hiroyama、Daijiro Inoue、Shingo Kameyama、Atsushi Tajiri、Masayuki Shono、Minoru Sawada、Akira Ibaraki (1.Materials and Devices Development Center, Sanyo Electric Co., Ltd.、2.LED Division, Tottori Sanyo Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.A-4-3

▲