High power and high temperature operation of 660 nm AlGaInP laser diodes for DVD-R/RW

Yasuaki Yoshida; Harumi Nishiguchi; Motoko Sasaki; Sinji Abe; Akihito Ohno; Masayoshi Takemi; Ken-ichi Ono; Jun-ichi Horie; Hiromasu Matsuoka; Yasunori Miyazaki; Tetsuya Yagi; Etuji Omura

doi:https://doi.org/10.7567/SSDM.2003.A-4-4

[A-4-4] High power and high temperature operation of 660 nm AlGaInP laser diodes for DVD-R/RW

Yasuaki Yoshida、Harumi Nishiguchi、Motoko Sasaki、Sinji Abe、Akihito Ohno、Masayoshi Takemi、Ken-ichi Ono、Jun-ichi Horie、Hiromasu Matsuoka、Yasunori Miyazaki、Tetsuya Yagi、Etuji Omura (1.High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.2003.A-4-4

2003 International Conference on Solid State Devices and Materials

[A-4-4] High power and high temperature operation of 660 nm AlGaInP laser diodes for DVD-R/RW