High perfomance of 1.54 μm InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells

Du Chang Heo; Il Ki Han; Jung Il Lee; Ji Chai Jeong

doi:https://doi.org/10.7567/SSDM.2003.A-4-5L

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-4-5L] High perfomance of 1.54 μm InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells

Du Chang Heo, Il Ki Han, Jung Il Lee, Ji Chai Jeong (1.Nano Device Research Center, Korea Institute of Science and Technology, 2.Dept. of Radio Engineering, Korea University)

https://doi.org/10.7567/SSDM.2003.A-4-5L

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