High perfomance of 1.54 μm InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells

Du Chang Heo; Il Ki Han; Jung Il Lee; Ji Chai Jeong

doi:https://doi.org/10.7567/SSDM.2003.A-4-5L

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-4-5L] High perfomance of 1.54 μm InGaAsP high-power tapered laser using high p-doped separate confinement layer and strain compensated multiple quantum wells

Du Chang Heo、Il Ki Han、Jung Il Lee、Ji Chai Jeong (1.Nano Device Research Center, Korea Institute of Science and Technology、2.Dept. of Radio Engineering, Korea University)

https://doi.org/10.7567/SSDM.2003.A-4-5L

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