[A-7-2] Effect of Coulomb Scattering on Stress-Induced Mobility Degradation in nMOSFETs with HfAlOX/SiO2 Dielectrics

W. Mizubayashi、N. Yasuda、H. Hisamatsu、H. Ota、K. Tominaga、K. Iwamoto、K. Yamamoto、T. Horikawa、T. Nabatame、A. Toriumi (1.MIRAI-ASRC AIST、2.MIRAI-ASET, AIST、3.Department of Materials Science, The University of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2003.A-7-2