[A-7-2] Effect of Coulomb Scattering on Stress-Induced Mobility Degradation in nMOSFETs with HfAlOX/SiO2 Dielectrics

W. Mizubayashi, N. Yasuda, H. Hisamatsu, H. Ota, K. Tominaga, K. Iwamoto, K. Yamamoto, T. Horikawa, T. Nabatame, A. Toriumi (1.MIRAI-ASRC AIST, 2.MIRAI-ASET, AIST, 3.Department of Materials Science, The University of Tokyo, Japan)

https://doi.org/10.7567/SSDM.2003.A-7-2