[A-8-1] Schottky Barrier Height Reduction and Drive Current Improvement in Metal Source/Drain MOSFET with Strained-Si Channel

Atsushi Yagishita、Tsu-Jae King、Jeffrey Bokor (1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、2.University of California at Berkeley, Department of Electrical Engineering and Computer Sciences)

https://doi.org/10.7567/SSDM.2003.A-8-1