[A-9-1] Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie、K. Kita、K. Kyuno、S. Takagi、K. Takasaki、M. Kubota、S. Saito、S. Nishikawa、A. Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo、2.Semiconductor Technology Academic Research Center (STARC))

https://doi.org/10.7567/SSDM.2003.A-9-1