High performance PZT capacitor using highly crystalline SRO bottom electrode for Mbit FeRAM devices

Hiroshi Itokawa; Katsuaki Natori; Soichi Yamazaki; Gerhard Beitel; Koji Yamakawa

doi:https://doi.org/10.7567/SSDM.2003.B-2-2

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-2-2] High performance PZT capacitor using highly crystalline SRO bottom electrode for Mbit FeRAM devices

Hiroshi Itokawa, Katsuaki Natori, Soichi Yamazaki, Gerhard Beitel, Koji Yamakawa (1.Semiconductor Company, Toshiba Corp., 2.Infineon Technologies Japan)

https://doi.org/10.7567/SSDM.2003.B-2-2

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