Excellent Electrical Characteristics of SONOS-type Flash Memory with High-κ Dielectric as Trapping and Blocking Layer

Myungjun Cho; Sangmoo Choi; Jung Woo Kim; Hyunsang Hwang

doi:https://doi.org/10.7567/SSDM.2003.B-4-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-4-3] Excellent Electrical Characteristics of SONOS-type Flash Memory with High-κ Dielectric as Trapping and Blocking Layer

Myungjun Cho, Sangmoo Choi, Jung Woo Kim, Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 2.MD laboratory, Samsung Advanced Institute of Technology)

https://doi.org/10.7567/SSDM.2003.B-4-3

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