[B-4-4] Data retention improvement of MONOS memories by using silicon-tetrachloride based silicon nitride with ultra-low Si-H bond density

K. Nomoto、G. Asayama、T. Kobayashi (1.Sony Microsystems Network Company, Atsugi Tec.、2.Present address:Sony Fusion Domain Laboratory, Heneda Tec.)

https://doi.org/10.7567/SSDM.2003.B-4-4