[C-1-2] Effect of the Film Composition of HfAlON Gate Dielectric on the Structural Transformation and the Electrical Properties through High-temperature Annealing

Masato Koyama, Yuuichi Kamimuta, Mitsuo Koike, Masamichi Suzuki, Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.C-1-2