[C-1-3] Projection of Mobility Degradation in HfAlOx /SiO2 nMOSFET towards the Reduction of Interfacial Oxide Thickness

N. Yasuda, H. Hisamatsu, H. Ota, K. Iwamoto, K. Tominaga, K. Yamamoto, W. Mizubayashi, N. Yamagishi, M. Ohno, S. Migita, Y. Morita, T. Horikawa, T. Nabatame, A. Toriumi (1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.Department of Materials Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.2003.C-1-3