[C-1-3] Projection of Mobility Degradation in HfAlOx /SiO2 nMOSFET towards the Reduction of Interfacial Oxide Thickness

N. Yasuda、H. Hisamatsu、H. Ota、K. Iwamoto、K. Tominaga、K. Yamamoto、W. Mizubayashi、N. Yamagishi、M. Ohno、S. Migita、Y. Morita、T. Horikawa、T. Nabatame、A. Toriumi (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.Department of Materials Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.2003.C-1-3