Hafnium Content Dependence of Bottom Interfacial Layer and Its Impact on HfxAl1-xOy High-k nMOSCAPs and nMOSFETs Characteristics

Yasuyuki Tamura; Yoshihiro Sugiyama; Masaomi Yamaguchi; Hiroshi Minakata; Yoshiaki Tanida; Tsunehisa Sakoda; Makoto Nakamura; Yasuo Nara

doi:https://doi.org/10.7567/SSDM.2003.C-1-5

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-1-5] Hafnium Content Dependence of Bottom Interfacial Layer and Its Impact on HfxAl1-xOy High-k nMOSCAPs and nMOSFETs Characteristics

Yasuyuki Tamura, Yoshihiro Sugiyama, Masaomi Yamaguchi, Hiroshi Minakata, Yoshiaki Tanida, Tsunehisa Sakoda, Makoto Nakamura, Yasuo Nara (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.2003.C-1-5

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