[C-2-1] Flatband Voltage Shift Caused by Dopants Diffused from Poly-Si Gate Electrode in Poly-Si/HfSiO/SiO2/Si

A. Kaneko, S. Inumiya, K. Sekine, M. Sato, Y. Kamimuta, K. Eguchi, Y. Tsunashima (1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 2.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.C-2-1