[C-2-1] Flatband Voltage Shift Caused by Dopants Diffused from Poly-Si Gate Electrode in Poly-Si/HfSiO/SiO2/Si

A. Kaneko、S. Inumiya、K. Sekine、M. Sato、Y. Kamimuta、K. Eguchi、Y. Tsunashima (1.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation、2.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.C-2-1