[C-5-3] The Delamination Mechanism of Porous Low-k Film during the Cu-CMP Process

S. Kondo, T. Nasuno, S. Ogawa, S. Tokitou, B.U. Yoon, A. Namiki, Y. Sone, K. Misawa, T. Yoshie, K. Yoneda, M. Shimada, S. Sone, H.J. Shin, N. Ohashi, I. Matsumoto, N. Kobayashi (1.Semiconductor Leading Edge Technologies, Inc. (Selete), 2.Novellus Systems Japan, Inc.)

https://doi.org/10.7567/SSDM.2003.C-5-3