[C-5-3] The Delamination Mechanism of Porous Low-k Film during the Cu-CMP Process

S. Kondo、T. Nasuno、S. Ogawa、S. Tokitou、B.U. Yoon、A. Namiki、Y. Sone、K. Misawa、T. Yoshie、K. Yoneda、M. Shimada、S. Sone、H.J. Shin、N. Ohashi、I. Matsumoto、N. Kobayashi (1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Novellus Systems Japan, Inc.)

https://doi.org/10.7567/SSDM.2003.C-5-3