Valence-Mended Si(100) for Nanoelectronic Applications

M. Tao; W. P. Kirk; D. Udeshi; S. Agarwal; E. Maldonado; N. Basit

doi:https://doi.org/10.7567/SSDM.2003.D-1-6

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-1-6] Valence-Mended Si(100) for Nanoelectronic Applications

M. Tao, W. P. Kirk, D. Udeshi, S. Agarwal, E. Maldonado, N. Basit (1.Department of Electrical Engineering and NanoFAB Center University of Texas at Arlington)

https://doi.org/10.7567/SSDM.2003.D-1-6

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