Valence-Mended Si(100) for Nanoelectronic Applications

M. Tao; W. P. Kirk; D. Udeshi; S. Agarwal; E. Maldonado; N. Basit

doi:https://doi.org/10.7567/SSDM.2003.D-1-6

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-1-6] Valence-Mended Si(100) for Nanoelectronic Applications

M. Tao、W. P. Kirk、D. Udeshi、S. Agarwal、E. Maldonado、N. Basit (1.Department of Electrical Engineering and NanoFAB Center University of Texas at Arlington)

https://doi.org/10.7567/SSDM.2003.D-1-6

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