[D-5-2] High-Aspect Ratio Gate Formation of Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation of Silicon Gate

Akira Katakami、Kei Kobayashi、Hideo Sunami (1.Hiroshima University, Research Center for Nanodevices and Systems、2.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.2003.D-5-2