The Japan Society of Applied Physics

2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-5-2] High-Aspect Ratio Gate Formation of Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation of Silicon Gate

Akira Katakami, Kei Kobayashi, Hideo Sunami (1.Hiroshima University, Research Center for Nanodevices and Systems, 2.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.2003.D-5-2