[D-5-3] An Experimental Study of The Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate MOSFETs

Yongxun Liu, Kenichi Ishii, Meishoku Masahara, Toshiyuki Tsutsumi, Hidenori Takashima, Eiich Suzuki (1.Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST))

https://doi.org/10.7567/SSDM.2003.D-5-3