Nanoscale Profiling of Surface Potential Across Silicon p-n Junctions by Scanning Resonance Tunneling Spectroscopy

Leonid Bolotov; Toshiko Okui; Hiroshi Itoh; Toshihiko Kanayama

doi:https://doi.org/10.7567/SSDM.2003.D-8-4L

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[D-8-4L] Nanoscale Profiling of Surface Potential Across Silicon p-n Junctions by Scanning Resonance Tunneling Spectroscopy

Leonid Bolotov、Toshiko Okui、Hiroshi Itoh、Toshihiko Kanayama (1.MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology)

https://doi.org/10.7567/SSDM.2003.D-8-4L

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