Optical characteristics of InAs/GaAs double quantum dots grown by MBE with Indium-Flush method

Shohgo Yamauchi; Kazuhiro Komori; Takeyoshi Sugaya; Keishiro Goshima

doi:https://doi.org/10.7567/SSDM.2003.E-3-1

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[E-3-1] Optical characteristics of InAs/GaAs double quantum dots grown by MBE with Indium-Flush method

Shohgo Yamauchi, Kazuhiro Komori, Takeyoshi Sugaya, Keishiro Goshima (1.National Institute of Advanced Industrial Science and Technology (AIST), 2.CREST, Japan Science and Technology Corporation (JST))

https://doi.org/10.7567/SSDM.2003.E-3-1

▲