Electron spin relaxation during transport in GaAs

Y. Sato; Y. Takahashi; Y. Kawamura; H. Kawaguchi

doi:https://doi.org/10.7567/SSDM.2003.E-3-6L

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[E-3-6L] Electron spin relaxation during transport in GaAs

Y. Sato、Y. Takahashi、Y. Kawamura、H. Kawaguchi (1.CREST, Japan Science and Technology Corporation.、2.Department of Electrical Engineering, Yamagata University.、3.Reserch Institute for Advanced Science and Technology, Osaka-Prefecture University.)

https://doi.org/10.7567/SSDM.2003.E-3-6L

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