Electron spin relaxation during transport in GaAs

Y. Sato; Y. Takahashi; Y. Kawamura; H. Kawaguchi

doi:https://doi.org/10.7567/SSDM.2003.E-3-6L

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[E-3-6L] Electron spin relaxation during transport in GaAs

Y. Sato, Y. Takahashi, Y. Kawamura, H. Kawaguchi (1.CREST, Japan Science and Technology Corporation., 2.Department of Electrical Engineering, Yamagata University., 3.Reserch Institute for Advanced Science and Technology, Osaka-Prefecture University.)

https://doi.org/10.7567/SSDM.2003.E-3-6L

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