InP hot electron transistors modulated by gate electrodes sandwiching emitter mesa

K. Takeuchi; H. Maeda; R. Nakagawa; Y. Miyamoto; K. Furuya

doi:https://doi.org/10.7567/SSDM.2003.E-7-3

[E-7-3] InP hot electron transistors modulated by gate electrodes sandwiching emitter mesa

K. Takeuchi, H. Maeda, R. Nakagawa, Y. Miyamoto, K. Furuya (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.CREST, Japan Science and Technology Corporation, 3.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2003.E-7-3

2003 International Conference on Solid State Devices and Materials

[E-7-3] InP hot electron transistors modulated by gate electrodes sandwiching emitter mesa