InP hot electron transistors modulated by gate electrodes sandwiching emitter mesa

K. Takeuchi; H. Maeda; R. Nakagawa; Y. Miyamoto; K. Furuya

doi:https://doi.org/10.7567/SSDM.2003.E-7-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[E-7-3] InP hot electron transistors modulated by gate electrodes sandwiching emitter mesa

K. Takeuchi、H. Maeda、R. Nakagawa、Y. Miyamoto、K. Furuya (1.Department of Physical Electronics, Tokyo Institute of Technology、2.CREST, Japan Science and Technology Corporation、3.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.2003.E-7-3

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